Feature

  • Up to 5 samples, which can be measured automatically
  • Analysis software with easy operation
  • The control freely depth observation
  • Measured pore size is atomic-vacancy from 10nm
  • Low-damage, non-destructive

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Specification and Performance

  • Space occupied by the equipment:4.7mx3.2mx2.2m(H)
  • Positron source：Na-22 (max.activity 1GBq)
  • Positron beam energy：0.5～15keV(variable)
  • Time resolution：＜300ps
  • γ-ray counting rate：＞500cps@1GBq
  • Measurement time：＜1h/spectrum

Application

  • VLSI materials:
    Low-k dielectrics, High-k gate dielectrics, Cu barrier films, Electroplated Cu films, SIO, Strained Si, Ion-implanted Si
  • Ⅲ-Ⅴ, Ⅱ-Ⅵ semiconductors:
    GaN, InN, ZnO, SiC, GaAs
  • Porous materials, Zeolite, Membranes, Polymer coating films (free volume)
    RO films, Gas barrier films,
    Mesoporous materials

Designed and developed by
Advanced Defect-Characterization Research Group, Research Institute of Instrumentation Frontier, National Institute of Advanced Industrial Science and Technology (AIST)